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Manhong Zhang | doi.page

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Manhong Zhang

North China Electric Power University(CN)Henan Agricultural University(CN)

Publications by Year

Research Areas

Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Negative Capacitance Devices, Advanced Memory and Neural Computing, Integrated Circuits and Semiconductor Failure Analysis

Most-Cited Works

→ Investigation of resistive switching in Cu-doped HfO₂thin film for multilevel non-volatile memory applications(2009)305 cited
→ Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications(2009)161 cited
→ Formation of multiple conductive filaments in the Cu/ZrO2:Cu/Pt device(2009)118 cited
→ Nanocarriers for oral drug delivery(2013)101 cited
→ Performance enhancement of multilevel cell nonvolatile memory by using a bandgap engineered high-κ trapping layer(2010)87 cited
→ Metal gate-HfO/sub 2/ MOS structures on GaAs substrate with and without Si interlayer(2006)81 cited

→ Self-emulsifying drug delivery system and the applications in herbal drugs(2013)

77 cited

→ Low-Power and Highly Uniform Switching in $ \hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer(2010)63 cited

→ Ultrathin HfO2 (equivalent oxide thickness=1.1nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation(2006)62 cited

→ Metal gate-HfO2 metal-oxide-semiconductor capacitors on n-GaAs substrate with silicon/germanium interfacial passivation layers(2006)51 cited