J. F. Zhang
Chinese Academy of Sciences(CN)Center for High Pressure Science and Technology Advanced Research(CN)Center for High Pressure Science & Technology Advanced Research(CN)Institute of Physics(CN)Liverpool John Moores University(GB)Fuzhou University(CN)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices
Most-Cited Works
- → Theoretical investigation of a 2 kA DC nitrogen arc in a supersonic nozzle(1987)110 cited
- → Ultra-high-speed directional protection of transmission lines using mathematical morphology(2003)97 cited
- → Electron trap generation in thermally grown SiO2 under Fowler–Nordheim stress(1992)88 cited
- → Positive bias temperature instability in MOSFETs(1998)82 cited
- → Effects of Dehydration and Rehydration on Cognitive Performance and Mood among Male College Students in Cangzhou, China: A Self-Controlled Trial(2019)79 cited
- → Hole Traps in Silicon Dioxides—Part I: Properties(2004)78 cited