a public good project by the
Synthesis
Company
of California

© 2026

Anastasia Chouprik | doi.page

0 works0 citations0 h-index

Anastasia Chouprik

Moscow Institute of Physics and Technology(RU)Moscow Power Engineering Institute(RU)

Publications by Year

Research Areas

Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Advanced Memory and Neural Computing, MXene and MAX Phase Materials, Ferroelectric and Piezoelectric Materials

Most-Cited Works

→ Ferroelectric Second-Order Memristor(2019)120 cited
→ Defects in ferroelectric HfO₂(2021)111 cited
→ Wake-Up in a Hf_0.5Zr_0.5O₂ Film: A Cycle-by-Cycle Emergence of the Remnant Polarization via the Domain Depinning and the Vanishing of the Anomalous Polarization Switching(2019)105 cited
→ Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions(2013)79 cited
→ Ferroelectricity in Hf_0.5Zr_0.5O₂ Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations(2018)77 cited
→ Electron transport across ultrathin ferroelectric Hf0.5Zr0.5O2 films on Si(2017)71 cited

→ Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices(2020)

65 cited

→ Memristor with a ferroelectric HfO ₂ layer: in which case it is a ferroelectric tunnel junction(2020)64 cited

→ Synthesis of Large Area Two-Dimensional MoS₂ Films by Sulfurization of Atomic Layer Deposited MoO₃ Thin Film for Nanoelectronic Applications(2019)49 cited

→ Synthesis of KNN nanoblocks through surfactant-assisted hot injection method and fabrication of flexible piezoelectric nanogenerator based on KNN-PVDF nanocomposite(2022)39 cited