Ugo Russo
Micron (United States)(US)Micron (Italy)(IT)
Publications by Year
Research Areas
Phase-change materials and chalcogenides, Advanced Memory and Neural Computing, Chalcogenide Semiconductor Thin Films, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices
Most-Cited Works
- → Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices(2009)378 cited
- → Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices(2009)356 cited
- → Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory(2009)319 cited
- → Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM(2007)139 cited
- → Modeling of Programming and Read Performance in Phase-Change Memories—Part I: Cell Optimization and Scaling(2008)115 cited
- → Intrinsic Data Retention in Nanoscaled Phase-Change Memories Part I: Monte Carlo Model for Crystallization and Percolation(2006)95 cited
- → Analytical Modeling of Chalcogenide Crystallization for PCM Data-Retention Extrapolation(2007)83 cited
- → Intrinsic Data Retention in Nanoscaled Phase-Change Memories Part II: Statistical Analysis and Prediction of Failure Time(2006)71 cited
- → Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) Memory(2009)70 cited
- → Modeling of Programming and Read Performance in Phase-Change Memories—Part II: Program Disturb and Mixed-Scaling Approach(2008)49 cited