Steven P. DenBaars
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, Semiconductor materials and devices, ZnO doping and properties
Most-Cited Works
- → Prospects for LED lighting(2009)2,137 cited
- → Direct formation of quantum-sized dots from uniform coherent islands of InGaAs on GaAs surfaces(1993)1,727 cited
- → Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening(2004)1,297 cited
- → Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors(2000)1,087 cited
- → Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films(1996)826 cited
- → Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements(1997)748 cited
- → “S-shaped” temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells(1998)708 cited
- → Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors(2006)683 cited
- → High-power AlGaN/GaN HEMTs for Ka-band applications(2005)487 cited
- → AlGaN/AlN/GaN high-power microwave HEMT(2001)486 cited