Seong Hun Yoon

Publications by Year

Research Areas

Thin-Film Transistor Technologies, ZnO doping and properties, Semiconductor materials and devices, Advanced Memory and Neural Computing, Ga2O3 and related materials

Most-Cited Works

• → High-Performance Thin-Film Transistor with Atomic Layer Deposition (ALD)-Derived Indium–Gallium Oxide Channel for Back-End-of-Line Compatible Transistor Applications: Cation Combinatorial Approach(2022)66 cited
• → Specific contact resistivity reduction in amorphous IGZO thin-film transistors through a TiN/IGTO heterogeneous interlayer(2024)42 cited
• → Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In₂O₃ and Application to High-Performance Field-Effect Transistors(2023)36 cited
• → Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO₂/IGZO Thin-Film Transistors(2023)30 cited
• → Improved Specific Contact Resistivity in Amorphous IGZO Transistors Using an ALD-Derived Al-Doped ZnO Interlayer(2024)19 cited
• → Tailoring Subthreshold Swing in A‐IGZO Thin‐Film Transistors for Amoled Displays: Impact of Conversion Mechanism on Peald Deposition Sequences(2024)19 cited
• → Oxide and 2D TMD semiconductors for 3D DRAM cell transistors(2024)18 cited
• → Enhanced Reliability of High-Quality a-IGZO TFTs for Micro-LED Backplanes: Mitigating V_TH Instability at Elevated Temperatures(2025)11 cited
• → Growth of Highly‐Ordered‐Crystalline Indium‐Gallium‐Oxide Thin‐Film via Plasma‐Enhanced ALD for High Performance Top‐Gate Field‐Effect Transistors(2024)10 cited
• → Design of an Atomic Layer-Deposited In₂O₃/Ga₂O₃ Channel Structure for High-Performance Thin-Film Transistors(2025)9 cited