Jun Yeong Seok
Yonsei University(KR)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Neuroscience and Neural Engineering, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices
Most-Cited Works
- → A Review of Three‐Dimensional Resistive Switching Cross‐Bar Array Memories from the Integration and Materials Property Points of View(2014)375 cited
- → Highly Uniform, Electroforming‐Free, and Self‐Rectifying Resistive Memory in the Pt/Ta2O5/HfO2‐x/TiN Structure(2014)270 cited
- → A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure(2011)193 cited
- → Highly Improved Uniformity in the Resistive Switching Parameters of TiO2 Thin Films by Inserting Ru Nanodots(2013)181 cited
- → Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash(2015)176 cited
- → 32 × 32 Crossbar Array Resistive Memory Composed of a Stacked Schottky Diode and Unipolar Resistive Memory(2012)174 cited
- → A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays(2010)136 cited
- → Electrically configurable electroforming and bipolar resistive switching in Pt/TiO2/Pt structures(2010)132 cited
- → Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM(2013)91 cited
- → Collective Motion of Conducting Filaments in Pt/n‐Type TiO2/p‐Type NiO/Pt Stacked Resistance Switching Memory(2011)89 cited