R. Laffont
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence(FR)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Memory and Neural Computing, Integrated Circuits and Semiconductor Failure Analysis, Analog and Mixed-Signal Circuit Design
Most-Cited Works
- → A new floating gate compact model applied to flash memory cell(2003)11 cited
- → A new architecture of EEPROM for high density and high reliability application(2005)9 cited
- → A Modelisation of the temperature dependence of the Fowler–Nordheim current in EEPROM memories(2009)9 cited
- → Data retention under gate stress on a NVM array(2012)7 cited
- → Conduction properties of electrically erasable read only memory tunnel oxides under dynamic stress(2001)6 cited
- → New EEPROM concept for single bit operation(2008)6 cited
- → Dual-control-gate floating gate transistor: a building block for circuit design(2011)6 cited
- → An experimental method allowing quantifying and localizing failed cells of an EEPROM CAST after a retention test(2008)6 cited
- → A new method to quantify retention-failed cells of an EEPROM CAST(2007)6 cited
- → On the Investigation of a Novel Dual-Control-Gate Floating Gate Transistor for VCO Applications(2013)5 cited