Julie Teetsov
GE Global Research (United States)(US)
Publications by Year
Research Areas
Near-Field Optical Microscopy, GaN-based semiconductor devices and materials, Quantum Dots Synthesis And Properties, Integrated Circuits and Semiconductor Failure Analysis, ZnO doping and properties
Most-Cited Works
- → Photophysical characterization of dilute solutions and ordered thin films of alkyl-substituted polyfluorenes(1999)232 cited
- → Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors(2003)156 cited
- → A Study of Excimer Emission in Solutions of Poly(9,9-dioctylfluorene) Using Electrogenerated Chemiluminescence(2000)124 cited
- → Microstructural origin of leakage current in GaN/InGaN light-emitting diodes(2004)121 cited
- → Imaging Molecular and Nanoscale Order in Conjugated Polymer Thin Films with Near-field Scanning Optical Microscopy(2001)74 cited
- → Near-Field Scanning Optical Microscopy (NSOM) Studies of Nanoscale Polymer Ordering in Pristine Films of Poly(9,9-dialkylfluorene)(2000)70 cited
- → Near-Field Scanning Optical Microscopy Studies of Nanoscale Order in Thermally Annealed Films of Poly(9,9-diakylfluorene)(2001)52 cited
- → Structural properties of alloyed Ti/Al/Ti/Au and Ti/Al/Mo/Au ohmic contacts to AlGaN/GaN(2006)41 cited
- → Influence of defects on electrical and optical characteristics of GaN/InGaN-based light-emitting diodes(2002)31 cited
- → Near-field scanning optical microscopy (NSOM) study of alkyl-substituted polyfluorene films: the affect of alkyl substituent length on nanoscale polymer ordering and cluster formation.(2001)10 cited