L. Eaves
University of Nottingham(GB)
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, Quantum and electron transport phenomena, Semiconductor Lasers and Optical Devices, Physics of Superconductivity and Magnetism, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures(2012)2,529 cited
- → Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics(2012)1,731 cited
- → High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe(2016)1,294 cited
- → Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers(2012)898 cited
- → Resonant tunnelling and negative differential conductance in graphene transistors(2013)635 cited
- → Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement(2013)614 cited