Taro Sugizaki
Sony (Taiwan)(TW)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Low-power high-performance VLSI design
Most-Cited Works
- → Novel multi-bit SONOS type flash memory using a high-k charge trapping layer(2004)81 cited
- → Extremely Low-voltage and High-speed Operation Bulk Thyristor-SRAM/DRAM (BT-RAM) Cell with Triple Selective Epitaxy Layers (TEL)(2007)6 cited
- → 35-nm gate-length and ultra low-voltage (0.45 V) operation Bulk Thyristor-SRAM/DRAM (BT-RAM) cell with Triple selective Epitaxy Layers (TELs)(2008)5 cited
- → Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded Dynamic Random Access Memories(2001)5 cited
- → Ultra High-speed Novel Bulk Thyristor-SRAM (BT-RAM) Cell with Selective Epitaxy Anode (SEA)(2006)3 cited
- → Ultrahigh-Density HfO2 Nanodots for Flash Memory Scaling(2006)2 cited
- → Low voltage/Sub-ns Operation Bulk Thyristor-SRAM (BT-RAM) Cell with Double Selective Epitaxy Emitters (DEE)(2007)2 cited
- → Dual-Thickness Gate Oxidation Technology with Halogen/Xenon Implantation for Embedded DRAMs(2000)1 cited
- → Advantages of bulk over SOI in performance of thyristor-based SRAM cell with selective epitaxy anode(2007)1 cited
- High-speed Operation SRAM cell using Bulk-type Thyristor(2007)