Jeremy D. Acord
Pennsylvania State University(US)Freeport-McMoRan (United States)(US)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Metal and Thin Film Mechanics, ZnO doping and properties, Ga2O3 and related materials
Most-Cited Works
- → Optical Properties of Rectangular Cross-sectional ZnS Nanowires(2004)199 cited
- → Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films(2009)45 cited
- → In situ stress measurements during MOCVD growth of AlGaN on SiC(2004)33 cited
- → Evolution of threading dislocations in MOCVD-grown GaN films on (111) Si substrates(2006)28 cited
- → In situ measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films(2008)25 cited
- → In situ observation of coalescence-related tensile stresses during metalorganic chemical vapor deposition of GaN on sapphire(2005)24 cited
- → Evolution of Threading Dislocation Density and Stress in GaN Films Grown on (111) Si Substrates by Metalorganic Chemical Vapor Deposition(2007)19 cited
- → Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1−xN MOCVD on SiC substrates(2007)14 cited
- → Thermal factors influencing the reliability of GaN HEMTs(2012)5 cited
- → Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide(2006)4 cited