M. A. Bobrov
Ioffe Institute(RU)
Publications by Year
Research Areas
Photonic and Optical Devices, Semiconductor Lasers and Optical Devices, Semiconductor Quantum Structures and Devices, Molecular Junctions and Nanostructures, Advanced Semiconductor Detectors and Materials
Most-Cited Works
- → High Power Single Mode 1300-nm Superlattice Based VCSEL: Impact of the Buried Tunnel Junction Diameter on Performance(2022)30 cited
- → Reliability performance of 25 Gbit s−1 850 nm vertical-cavity surface-emitting lasers(2013)23 cited
- → Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems(2023)22 cited
- → A Vertical-Cavity Surface-Emitting Laser for the 1.55-μm Spectral Range with Tunnel Junction Based on n++-InGaAs/p++-InGaAs/p++-InAlGaAs Layers(2020)20 cited
- → High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)(2018)19 cited
- → The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology(2020)19 cited
- → Laser Source for a Compact Nuclear Magnetic Resonance Gyroscope(2018)17 cited
- → Analysis of the Internal Optical Losses of the Vertical-Cavity Surface-Emitting Laser of the Spectral Range of 1.55 µm Formed by a Plate Sintering Technique(2019)16 cited
- → 1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy(2020)15 cited
- → Design optimization for bright electrically-driven quantum dot single-photon sources emitting in telecom O-band(2021)15 cited