Kazuhiro Karahashi
The University of Osaka(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Plasma Diagnostics and Applications, Ion-surface interactions and analysis, Metal and Thin Film Mechanics, ZnO doping and properties
Most-Cited Works
- → Future of plasma etching for microelectronics: Challenges and opportunities(2024)115 cited
- → Progress in nanoscale dry processes for fabrication of high-aspect-ratio features: How can we control critical dimension uniformity at the bottom?(2018)100 cited
- → Etching yield of SiO2 irradiated by F+, CFx+ (x=1,2,3) ion with energies from 250 to 2000 eV(2004)80 cited
- → Mass-analyzed CFx+ (x=1,2,3) ion beam study on selectivity of SiO2-to-SiN etching and a-C:F film deposition(2005)68 cited
- → Hydrogen effects in hydrofluorocarbon plasma etching of silicon nitride: Beam study with CF+, CF2+, CHF2+, and CH2F+ ions(2011)68 cited
- → Foundations of atomic-level plasma processing in nanoelectronics(2022)53 cited
- → Ion beam experiments for the study of plasma–surface interactions(2014)52 cited
- → Progress and prospects in nanoscale dry processes: How can we control atomic layer reactions?(2017)52 cited
- → Characterization of polymer layer formation during SiO2/SiN etching by fluoro/hydrofluorocarbon plasmas(2014)47 cited
- → Transitional change to amorphous fluorinated carbon film deposition under energetic irradiation of mass-analyzed carbon monofluoride ions on silicon dioxide surfaces(2003)45 cited