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Jun Hyung Lim | doi.page

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Jun Hyung Lim

SK Group (South Korea)(KR)Yong In University(KR)Singapore Institute of Technology(SG)Samsung (South Korea)(KR)Jaseng Hospital of Korean Medicine(KR)

Publications by Year

Research Areas

ZnO doping and properties, Thin-Film Transistor Technologies, Semiconductor materials and devices, Physics of Superconductivity and Magnetism, Superconductivity in MgB2 and Alloys

Most-Cited Works

→ A case study on fibrous porous SnO2 anode for robust, high-capacity lithium-ion batteries(2014)193 cited
→ Low-temperature synthesis of 2D MoS₂on a plastic substrate for a flexible gas sensor(2018)177 cited
→ High-performance hysteresis-free perovskite transistors through anion engineering(2022)118 cited
→ Growth behavior and electrical performance of Ga-doped ZnO nanorod/p-Si heterojunction diodes prepared using a hydrothermal method(2013)117 cited
→ Solution-processed InGaZnO-based thin film transistors for printed electronics applications(2009)95 cited
→ Design of InZnSnO Semiconductor Alloys Synthesized by Supercycle Atomic Layer Deposition and Their Rollable Applications(2019)92 cited

→ Hydrothermally Grown In-doped ZnO Nanorods on p-GaN Films for Color-tunable Heterojunction Light-emitting-diodes(2015)

74 cited

→ Polycrystalline Indium Gallium Tin Oxide Thin-Film Transistors With High Mobility Exceeding 100 cm2/Vs(2021)72 cited

→ Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods(2017)68 cited

→ High Photosensitive Indium–Gallium–Zinc Oxide Thin-Film Phototransistor with a Selenium Capping Layer for Visible-Light Detection(2020)67 cited