Huixia Fu
Chongqing University(CN)
Publications by Year
Research Areas
Graphene research and applications, Topological Materials and Phenomena, 2D Materials and Applications, Electronic and Structural Properties of Oxides, Quantum and electron transport phenomena
Most-Cited Works
- → A native oxide high-κ gate dielectric for two-dimensional electronics(2020)282 cited
- → Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se(2018)250 cited
- → Single-crystalline van der Waals layered dielectric with high dielectric constant(2023)158 cited
- → Low Residual Carrier Concentration and High Mobility in 2D Semiconducting Bi2O2Se(2018)144 cited
- → Ordered and Reversible Hydrogenation of Silicene(2015)143 cited
- → Interlayer‐State‐Coupling Dependent Ultrafast Charge Transfer in MoS2/WS2 Bilayers(2017)115 cited
- → Intrinsic valley polarization of magnetic VSe2 monolayers(2017)114 cited
- → Observation of charge to spin conversion in Weyl semimetal WTe2 at room temperature(2020)111 cited
- → Suppressed superconductivity in substrate-supported β 12 borophene by tensile strain and electron doping(2017)110 cited
- → From Silicene to Half-Silicane by Hydrogenation(2015)108 cited