H. Pötzl
TU Wien(AT)
Publications by Year
Research Areas
Silicon and Solar Cell Technologies, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Integrated Circuits and Semiconductor Failure Analysis, Semiconductor materials and interfaces
Most-Cited Works
- → MINIMOS—A two-dimensional MOS transistor analyzer(1980)252 cited
- → Simulation of critical IC fabrication processes using advanced physical and numerical methods(1985)134 cited
- → Generalized Model for the Clustering of As Dopants in Si(1982)83 cited
- → MOS modelling by analytical approximations. I. Subthreshold current and threshold voltage(1979)70 cited
- → A two-dimensional model of the avalanche effects in MOS transistors(1982)57 cited
- → Investigation of parameter sensitivity of short channel mosfets(1982)48 cited
- → Analysis of Breakdown Phenomena in MOSFET's(1982)45 cited
- → MINIMOS - A Two-Dimensional MOS Transistor Analyzer(1980)42 cited
- → Bänderstruktur und Stromtransport(1976)31 cited
- → Determination of the Retarded Diffusion of Antimony by SIMS Measurements and Numerical Simulations(1986)26 cited