G. Lindstroem
Universität Hamburg(DE)
Publications by Year
Research Areas
Particle Detector Development and Performance, Silicon and Solar Cell Technologies, Radiation Detection and Scintillator Technologies, Semiconductor materials and devices, Radiation Effects in Electronics
Most-Cited Works
- → Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors(2009)134 cited
- → Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy(2015)99 cited
- → Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons(2003)55 cited
- → Study of the long term stability of the effective concentration of ionized space charges (N/sub eff/) of neutron irradiated silicon detectors fabricated by various thermal oxidation processes(1995)42 cited
- → Thermally stimulated current method applied on diodes with high concentration of deep trapping levels(2001)41 cited
- → A new method of carrier trapping time measurement(2000)38 cited
- → Defect generation in crystalline silicon irradiated with high energy particles(2002)29 cited
- → Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV(2013)27 cited
- → Silicon sampling hadronic calorimetry: A tool for experiments at the next generation of colliders(1989)26 cited
- → Microscopic analysis of defects in a high resistivity silicon detector irradiated to 1.7/spl times/10/sup 15/ n/cm/sup 2/(1996)24 cited