R. M. Kolbas
Publications by Year
Research Areas
Semiconductor Quantum Structures and Devices, GaN-based semiconductor devices and materials, Semiconductor Lasers and Optical Devices, Semiconductor materials and devices, ZnO doping and properties
Most-Cited Works
- → Absorption coefficient, energy gap, exciton binding energy, and recombination lifetime of GaN obtained from transmission measurements(1997)748 cited
- → Quantum-well heterostructure lasers(1980)541 cited
- → Optical and structural properties of epitaxial MgxZn1−xO alloys(1999)390 cited
- → Excitonic structure and absorption coefficient measurements of ZnO single crystal epitaxial films deposited by pulsed laser deposition(1999)356 cited
- → Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition(1991)171 cited
- → Absorption Coefficient and Refractive Index of GaN, AlN and AlGaN Alloys(1999)168 cited
- → Optical characterization of pseudomorphic InxGa1−xAs–GaAs single-quantum-well heterostructures(1986)139 cited
- → Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE(1990)132 cited
- → Visible-blind GaN Schottky barrier detectors grown on Si(111)(1998)127 cited
- → Carrier collection in a semiconductor quantum well(1978)125 cited