Xiaoli Tian
North University of China(CN)Chinese Academy of Sciences(CN)Chinese Academy of Sciences(CN)Harbin Institute of Technology(CN)Institute of Microelectronics(SG)Institute of Microelectronics(CN)
Publications by Year
Research Areas
Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Electromagnetic Compatibility and Noise Suppression, Electrostatic Discharge in Electronics
Most-Cited Works
- → Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)(2019)97 cited
- → Impact of Varied Buffer Layer Designs on Single-Event Response of 1.2-kV SiC Power MOSFETs(2020)64 cited
- → A Novel 4H-SiC Trench MOSFET Integrated With Mesa-Sidewall SBD(2020)35 cited
- → Analysis of Mobility for 4H-SiC N/P-Channel MOSFETs Up To 300 °C(2021)28 cited
- → Analysis of Gate Oxide Degradation Induced by Heavy Ion in SiC Power MOSFETs(2024)18 cited
- → A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up(2016)15 cited