X. C. Xie
Ministry of Education of the People's Republic of China(CN)Chongqing University of Science and Technology(CN)Chinese Academy of Sciences(CN)Qufu Normal University(CN)Peking University(CN)Fudan University(CN)Center for Theoretical Physics(PL)Shantou University(CN)Guangzhou University(CN)Hefei University(CN)Quantum Devices (United States)(US)Shanghai Advanced Research Institute(CN)First Affiliated Hospital of Shantou University Medical College(CN)Ministry of Education(TH)Quantum Design (Germany)(DE)Science and Technology on Surface Physics and Chemistry Laboratory(CN)Hangzhou Xixi hospital(CN)State Key Laboratory of Surface PhysicsChongqing University of Technology(CN)Zhejiang University(CN)
Publications by Year
Research Areas
Topological Materials and Phenomena, Quantum and electron transport phenomena, Graphene research and applications, Physics of Superconductivity and Magnetism, Advanced Condensed Matter Physics
Most-Cited Works
- → Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry(2009)742 cited
- → Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit(2010)432 cited
- → Landau Quantization of Topological Surface States inBi2Se3(2010)397 cited
- → Mobility Edge in a Model One-Dimensional Potential(1988)301 cited
- → Localization, mobility edges, and metal-insulator transition in a class of one-dimensional slowly varying deterministic potentials(1990)209 cited
- → Anisotropic magnetotransport and exotic longitudinal linear magnetoresistance inWTe2crystals(2015)190 cited