Mengwei Si
Shanghai Jiao Tong University(CN)Harbin Institute of Technology(CN)Technology Centre for Offshore and Marine, Singapore(SG)Institute of Navigation(US)State Key Laboratory of Robotics and SystemsVirginia Tech(US)
Publications by Year
Research Areas
Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Memory and Neural Computing, MXene and MAX Phase Materials
Most-Cited Works
- → Ultra-wide bandgap semiconductor Ga2O3 power diodes(2022)575 cited
- → Steep-slope hysteresis-free negative capacitance MoS2 transistors(2017)535 cited
- → One-Dimensional van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-Transport(2017)373 cited
- → Ferroelectric Field-Effect Transistors Based on MoS2 and CuInP2S6 Two-Dimensional van der Waals Heterostructure(2018)356 cited
- → Scaled indium oxide transistors fabricated using atomic layer deposition(2022)267 cited
- → Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: An Insight into Current Flow across Schottky Barriers(2013)248 cited