M. Saito
Yamagata University(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Silicon Carbide Semiconductor Technologies, 3D IC and TSV technologies, Electronic Packaging and Soldering Technologies
Most-Cited Works
- → 1.5 nm direct-tunneling gate oxide Si MOSFET's(1996)346 cited
- → Analysis of resistance behavior in Ti- and Ni-salicided polysilicon films(1994)151 cited
- → A 40 nm gate length n-MOSFET(1995)114 cited
- → Sub-50 nm gate length n-MOSFETs with 10 nm phosphorus source and drain junctions(2002)105 cited
- → Scaling the MOS transistor below 0.1 μm: methodology, device structures, and technology requirements(1994)99 cited
- → Tunneling gate oxide approach to ultra-high current drive in small geometry MOSFETs(2002)87 cited
- → 0.15-μm RF CMOS technology compatible with logic CMOS for low-voltage operation(1998)51 cited