Geun Hyeong Park
Publications by Year
Research Areas
Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Ferroelectric and Piezoelectric Materials, Advanced Memory and Neural Computing, MXene and MAX Phase Materials
Most-Cited Works
- → Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics(2022)164 cited
- → Neuromorphic devices based on fluorite‐structured ferroelectrics(2022)52 cited
- → Effect of residual impurities on polarization switching kinetics in atomic-layer-deposited ferroelectric Hf0.5Zr0.5O2 thin films(2021)41 cited
- → Wake-up-mitigated giant ferroelectricity in Hf0.5Zr0.5O2 thin films through oxygen-providing, surface-oxidized W electrode(2023)38 cited
- → A perspective on the physical scaling down of hafnia-based ferroelectrics(2023)33 cited
- → Engineering Strategies in Emerging Fluorite-Structured Ferroelectrics(2021)24 cited
- → Perspective on Ferroelectric Devices: Lessons from Interfacial Chemistry(2023)24 cited
- → Revival of Ferroelectric Memories Based on Emerging Fluorite‐Structured Ferroelectrics (Adv. Mater. 43/2023)(2023)23 cited
- → Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications(2023)22 cited
- → Interfacial engineering of a Mo/Hf0.3Zr0.7O2/Si capacitor using the direct scavenging effect of a thin Ti layer(2021)22 cited