Hirofumi Matsuhata
Innovative Energy Solution (United States)(US)
Publications by Year
Research Areas
Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices, Semiconductor Quantum Structures and Devices, Semiconductor materials and interfaces, Silicon and Solar Cell Technologies
Most-Cited Works
- → Effect of Structural Parameters on Superconductivity in Fluorine-Free LnFeAsO1-y (Ln = La, Nd)(2008)605 cited
- → Crystal and magnetic structure ofCa3Ru2O7(2005)136 cited
- → Quantum-size effects on radiative lifetimes and relaxation of excitons in semiconductor nanostructures(1998)124 cited
- → Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates(2005)109 cited
- → Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes(2016)100 cited
- → Flow rate modulation epitaxy of AlGaAs/GaAs quantum wires on nonplanar substrate(1995)93 cited