T. Agatsuma
Yamagata University(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and interfaces, Photonic and Optical Devices, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → Turnover phenomenon of N+N N+plate contact silicon device and second breakdown in transistors(1965)13 cited
- → An aspect of second breakdown in transistors(1964)9 cited
- → Comparison of electromigration phenomenon between aluminum interconnection of various multilayered materials(2003)8 cited
- → Beveling Aluminum in Multilayer Metal Circuitry(1975)7 cited
- → Turnover phenomenon in N ν N Si devices and second breakdown in transistors(1966)6 cited
- → The second breakdown V-I characteristics in the triple diffused Si transistor(1965)5 cited
- → An analysis of equivalent circuit with gate protection in MOS devices(1978)2 cited
- → Use of drain capacitance—Voltage characteristics as a process control tool for the threshold voltage of Silicon gate MOSFET's(1975)2 cited
- → A characterization technique for second breakdown in Ge alloyed junction transistors(1966)1 cited
- → Resistor-transistor logic circuits using vertical-type organic transistors(2016)1 cited