E. Feltin
École Polytechnique Fédérale de Lausanne(CH)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, Semiconductor materials and devices, Strong Light-Matter Interactions
Most-Cited Works
- → Room-Temperature Polariton Lasing in Semiconductor Microcavities(2007)999 cited
- → Current status of AlInN layers lattice-matched to GaN for photonics and electronics(2007)325 cited
- → Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity(2008)317 cited
- → High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures(2006)316 cited
- → Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy(2001)271 cited
- → Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser(2008)253 cited
- → Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?(2006)176 cited
- → Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)(2008)164 cited
- → Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials(2005)153 cited
- → 205-GHz (Al,In)N/GaN HEMTs(2010)149 cited