Tao Sun
BOE Technology Group (China)(CN)
Publications by Year
Research Areas
Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Thin-Film Transistor Technologies, GaN-based semiconductor devices and materials
Most-Cited Works
- → Ultralow ON-Resistance SOI LDMOS With Three Separated Gates and High-<inline-formula> <tex-math notation="LaTeX">$k$ </tex-math> </inline-formula> Dielectric(2016)41 cited
- → High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer(2019)39 cited
- → A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance(2019)33 cited
- → A Snapback-Free Fast-Switching SOI LIGBT With Polysilicon Regulative Resistance and Trench Cathode(2017)25 cited
- → An Ultralow Loss Superjunction Reverse Blocking Insulated-Gate Bipolar Transistor With Shorted-Collector Trench(2016)25 cited
- → 4H-SiC superjunction trench MOSFET with reduced saturation current(2018)24 cited
- → A snapback-free RC-IGBT with Alternating N/P buffers(2017)23 cited
- → A Snapback-Free Fast-Switching SOI LIGBT With an Embedded Self-Biased n-MOS(2018)22 cited
- → Low Reverse Conduction Loss β-Ga2O3 Vertical FinFET With an Integrated Fin Diode(2023)20 cited
- → A Carrier Stored SOI LIGBT With Ultralow ON-State Voltage and High Current Capability(2018)20 cited