Kelson D. Chabak
United States Air Force Research Laboratory(US)
Publications by Year
Research Areas
Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, Semiconductor materials and devices, Electronic and Structural Properties of Oxides
Most-Cited Works
- → 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped <inline-formula> <tex-math notation="LaTeX">$\beta $ </tex-math> </inline-formula>-Ga2O3MOSFETs(2016)552 cited
- → β-Gallium oxide power electronics(2022)471 cited
- → Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage(2016)361 cited
- → Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures(2018)341 cited
- → $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation(2017)312 cited
- → Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs(2017)251 cited
- → Ge-Doped ${\beta }$ -Ga2O3 MOSFETs(2017)222 cited
- → Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition(2017)167 cited
- → Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices(2017)141 cited
- → ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance(2019)122 cited