D. Schroyen
Joint Research Center(BE)
Publications by Year
Research Areas
Ion-surface interactions and analysis, Advanced Semiconductor Detectors and Materials, Semiconductor materials and interfaces, Semiconductor Quantum Structures and Devices, Silicon and Solar Cell Technologies
Most-Cited Works
- → Observation of Co-Dimer Formation during Thermal Annealing of Co-Implanted Si(1984)15 cited
- → Site Occupation of Implanted Te in Gaas As a Function of Implantation Dose(1987)11 cited
- → Thin reference layers available for calibration purposes in ion beam analysis(1990)10 cited
- → Ion implantation in highly oriented pyrolytic graphite(1986)7 cited
- → Mössbauer and RBS study of thermally annealed Te-implanted GaAs(1986)7 cited
- → Location of Te in epitaxially regrown Si layers(1984)6 cited
- → Evolution of Defect Structures around Te Implanted in GaAs during Solid Phase Epitaxial Regrowth(1986)4 cited
- → Lattice location and thermal annealing behaviour studies of GaAs single crystals implanted with Co-atoms(1986)4 cited
- → Amorphization of tellurium by ion implantation(1982)4 cited
- → Investigation of damage produced by self-implantation of tellurium(1983)1 cited