Sylvain Barraud
Institut polytechnique de Grenoble(FR)Inserm(FR)Commissariat à l'Énergie Atomique et aux Énergies Alternatives(FR)Université Paris Sciences et Lettres(FR)CEA Grenoble(FR)Direction de la Recherche Technologique(FR)Laboratoire d'Électronique des Technologies de l'Information(FR)Institut Curie(FR)Université Grenoble Alpes(FR)
Publications by Year
Research Areas
Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and devices, Nanowire Synthesis and Applications, Quantum and electron transport phenomena, Integrated Circuits and Semiconductor Failure Analysis
Most-Cited Works
- → A CMOS silicon spin qubit(2016)582 cited
- → Scaling of Trigate Junctionless Nanowire MOSFET With Gate Length Down to 13 nm(2012)259 cited
- → Probing the limits of gate-based charge sensing(2015)172 cited
- → Performance and design considerations for gate-all-around stacked-NanoWires FETs(2017)148 cited
- → Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm(2012)145 cited
- → Gate-based high fidelity spin readout in a CMOS device(2019)144 cited
- → Electrical Spin Driving by g-Matrix Modulation in Spin-Orbit Qubits