A. Dussaigne
Commissariat à l'Énergie Atomique et aux Énergies Alternatives(FR)CEA Grenoble(FR)Laboratoire d'Électronique des Technologies de l'Information(FR)Université Grenoble Alpes(FR)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Ga2O3 and related materials, Semiconductor materials and devices, ZnO doping and properties
Most-Cited Works
- → Dependence of the Mg-related acceptor ionization energy with the acceptor concentration in p-type GaN layers grown by molecular beam epitaxy(2013)125 cited
- → Enhanced In incorporation in full InGaN heterostructure grown on relaxed InGaN pseudo-substrate(2017)121 cited
- → Radiative lifetime of a single electron-hole pair inGaN∕AlNquantum dots(2006)114 cited
- → Direct Imaging of p–n Junction in Core–Shell GaN Wires(2014)83 cited
- → Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy(2009)75 cited
- → Full InGaN red (625 nm) micro-LED (10 μm) demonstration on a relaxed pseudo-substrate(2021)74 cited