Sanghyuk Kwon
Samsung (South Korea)(KR)
Publications by Year
Research Areas
Semiconductor materials and devices, Advanced Memory and Neural Computing, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Negative Capacitance Devices, Parallel Computing and Optimization Techniques
Most-Cited Works
- → 25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications(2021)187 cited
- → CiDRA: A cache-inspired DRAM resilience architecture(2015)51 cited
- → A 16Gb LPDDR4X SDRAM with an NBTI-tolerant circuit solution, an SWD PMOS GIDL reduction technique, an adaptive gear-down scheme and a metastable-free DQS aligner in a 10nm class DRAM process(2018)23 cited
- → Understanding DDR4 in pursuit of In-DRAM ECC(2014)19 cited
- → CIDR: A Cache Inspired Area-Efficient DRAM Resilience Architecture against Permanent Faults(2014)4 cited