Yung‐Chang Lin
National Chung Hsing University(TW)Council for Scientific and Industrial Research(ZA)Materials innovation institute(NL)Supermicro (United States)(US)Osaka Research Institute of Industrial Science and Technology(JP)National Institute of Advanced Industrial Science and Technology(JP)Cheng Shiu University(TW)The University of Osaka(JP)National Taipei University(TW)
Publications by Year
Research Areas
2D Materials and Applications, Graphene research and applications, MXene and MAX Phase Materials, Perovskite Materials and Applications, Seismic Performance and Analysis
Most-Cited Works
- → Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2(2014)1,386 cited
- → Epitaxial growth of a monolayer WSe 2 -MoS 2 lateral p-n junction with an atomically sharp interface(2015)1,178 cited
- → Graphene Annealing: How Clean Can It Be?(2011)925 cited
- → MoS2 monolayer catalyst doped with isolated Co atoms for the hydrodeoxygenation reaction(2017)885 cited
- → Controllable graphene N-doping with ammonia plasma(2010)483 cited
- → Single-Layer ReS2: Two-Dimensional Semiconductor with Tunable In-Plane Anisotropy(2015)427 cited