Johan Bergsten
RISE Research Institutes of Sweden(SE)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor Quantum Structures and Devices, Radio Frequency Integrated Circuit Design, Semiconductor materials and devices, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → Enhanced Tunnel Spin Injection into Graphene using Chemical Vapor Deposited Hexagonal Boron Nitride(2014)167 cited
- → A GaN–SiC hybrid material for high-frequency and power electronics(2018)93 cited
- → Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer(2015)81 cited
- → Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers(2018)77 cited
- → Spintronics with graphene-hexagonal boron nitride van der Waals heterostructures(2014)51 cited
- → Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results(2015)36 cited
- → Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition(2015)30 cited
- → A versatile low-resistance ohmic contact process with ohmic recess and low-temperature annealing for GaN HEMTs(2018)27 cited
- → Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN/AlN/GaN heterostructures(2015)25 cited
- → Performance Enhancement of Microwave GaN HEMTs Without an AlN-Exclusion Layer Using an Optimized AlGaN/GaN Interface Growth Process(2015)20 cited