0 works0 citations0 h-index

Marek Skowroński

Carnegie Mellon University(US)

Publications by Year

Research Areas

Silicon Carbide Semiconductor Technologies, Semiconductor materials and devices, GaN-based semiconductor devices and materials, Advanced Memory and Neural Computing, Semiconductor materials and interfaces

Most-Cited Works

→ Degradation of hexagonal silicon-carbide-based bipolar devices(2006)459 cited
→ Determination of wurtzite GaN lattice polarity based on surface reconstruction(1998)305 cited
→ Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxy(1995)284 cited
→ Reconstructions of GaN(0001) and (0001) surfaces: Ga-rich metallic structures(1998)242 cited
→ Dislocation conversion in 4H silicon carbide epitaxy(2002)235 cited
→ Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy(1995)216 cited

→ Lifetime-limiting defects in n− 4H-SiC epilayers(2006)

215 cited

→ Intracenter transitions in the dominant deep level (EL2) in GaAs(1983)196 cited

→ Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions(2002)182 cited

→ Identification of the 0.82-eV Electron Trap,EL2in GaAs, as an Isolated Antisite Arsenic Defect(1985)181 cited