Toshinari Sasaki
Japan Display (Japan)(JP)
Publications by Year
Research Areas
Thin-Film Transistor Technologies, Transition Metal Oxide Nanomaterials, Semiconductor materials and devices, ZnO doping and properties, Silicon Nanostructures and Photoluminescence
Most-Cited Works
- → Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor(2012)99 cited
- → Temperature Dependence of Transistor Characteristics and Electronic Structure for Amorphous In–Ga–Zn-Oxide Thin Film Transistor(2010)61 cited
- → 4.0-inch Active-Matrix Organic Light-Emitting Diode Display Integrated with Driver Circuits Using Amorphous In–Ga–Zn-Oxide Thin-Film Transistors with Suppressed Variation(2010)58 cited
- → 21.3: 4.0 In. QVGA AMOLED Display Using In‐Ga‐Zn‐Oxide TFTs with a Novel Passivation Layer(2009)54 cited
- → P‐9: Numerical Analysis on Temperature Dependence of Characteristics of Amorphous In‐Ga‐Zn‐Oxide TFT(2009)38 cited
- → 1Mb Non-Volatile Random Access Memory Using Oxide Semiconductor(2011)25 cited
- → 9-2: Optical Compensation Method for Wide Viewing Angle IPS LCD Using a Plastic Substrate(2016)17 cited
- → 8‐1: Invited Paper: High Mobility Poly‐Crystalline Oxide TFT Achieving Mobility over 50 cm 2 /Vs and High Level of Uniformity on the Large Size Substrates(2023)7 cited
- → High Mobility Oxide TFT Using Poly-Crystalline Oxide Semiconductor on Gen.6 Glass Substrate(2023)1 cited
- → TFT Characteristics of High Mobility Poly-Crystalline Oxide(2024)