Stefan Slesazeck
NaMLab (Germany)(DE)
Publications by Year
Research Areas
Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Advanced Memory and Neural Computing, Ferroelectric and Piezoelectric Materials, MXene and MAX Phase Materials
Most-Cited Works
- → Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors(2016)881 cited
- → A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond(2017)524 cited
- → The Past, the Present, and the Future of Ferroelectric Memories(2020)436 cited
- → Reconfigurable Silicon Nanowire Transistors(2011)434 cited
- → Next generation ferroelectric materials for semiconductor process integration and their applications(2021)410 cited
- → Unveiling the double-well energy landscape in a ferroelectric layer(2019)402 cited
- → A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs(2016)394 cited
- → Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors(2017)326 cited
- → Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors(2018)316 cited
- → Ferroelectric field-effect transistors based on HfO 2 : a review(2021)294 cited