Koji Sakui
Tokyo Institute of Technology(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Advanced Data Storage Technologies, 3D IC and TSV technologies, Silicon Carbide Semiconductor Technologies
Most-Cited Works
- → A CMOS bandgap reference circuit with sub-1-V operation(1999)878 cited
- → A quick intelligent page-programming architecture and a shielded bitline sensing method for 3 V-only NAND flash memory(1994)85 cited
- → A reliable bi-polarity write/erase technology in flash EEPROMs(2002)45 cited
- → A negative V/sub th/ cell architecture for highly scalable, excellently noise-immune, and highly reliable NAND flash memories(1999)34 cited
- → A 130-mm/sup 2/, 256-Mbit NAND flash with shallow trench isolation technology(1999)30 cited
- → A source-line programming scheme for low-voltage operation NAND flash memories(2000)29 cited
- → A new static memory cell based on the reverse base current effect of bipolar transistors(1989)27 cited
- → A 120-mm/sup 2/ 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed(1997)26 cited
- → Review of Bumpless Build Cube (BBCube) Using Wafer-on-Wafer (WOW) and Chip-on-Wafer (COW) for Tera-Scale Three-Dimensional Integration (3DI)(2022)23 cited
- → A new technique for measuring threshold voltage distribution in flash EEPROM devices(2002)17 cited