M. Scheffler
Deutsches Zentrum für Luft- und Raumfahrt e. V. (DLR)(DE)
Publications by Year
Research Areas
Advanced Chemical Physics Studies, Surface and Thin Film Phenomena, Semiconductor Quantum Structures and Devices, Graphene research and applications, Quantum and electron transport phenomena
Most-Cited Works
- → GaAs equilibrium crystal shape from first principles(1996)401 cited
- → Surface electronic structure of theFe3O4(100): Evidence of a half-metal to metal transition(2005)241 cited
- → Effect of the cluster size in modeling the H2 desorption and dissociative adsorption on Si(001)(1999)165 cited
- → Role of Electronic Correlation in the Si(100) Reconstruction: A Quantum Monte Carlo Study(2001)151 cited
- → Step-flow growth in homoepitaxy of β-Ga2O3 (100)—The influence of the miscut direction and faceting(2018)120 cited
- → Highly Site-SpecificH2Adsorption on VicinalSi(001)Surfaces(1998)100 cited
- → Theory of Adsorption and Desorption ofH2/Si(001)(1995)93 cited
- → Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots(2003)92 cited
- → Understanding the growth mechanisms of GaAs and InGaAs thin films by employing first-principles calculations(2003)78 cited
- → Analytic many-body potential for InAs/GaAs surfaces and nanostructures: Formation energy of InAs quantum dots(2008)61 cited