Kazuhiro Eguchi
Kyushu Institute of Technology(JP)
Publications by Year
Research Areas
Semiconductor materials and devices, Advancements in Semiconductor Devices and Circuit Design, Ferroelectric and Negative Capacitance Devices, Integrated Circuits and Semiconductor Failure Analysis, Ferroelectric and Piezoelectric Materials
Most-Cited Works
- → Process integration technology and device characteristics of CMOS FinFET on bulk silicon substrate with sub-10 nm fin width and 20 nm gate length(2006)76 cited
- → Magnetic Resonance Wireless Power Transfer Over 10 m With Multiple Coils Immersed in Seawater(2019)67 cited
- → High-Performance FinFET with Dopant-Segregated Schottky Source/Drain(2006)53 cited
- → Ruthenium Films Prepared by Liquid Source Chemical Vapor Deposition Using Bis-(ethylcyclopentadienyl)ruthenium(1999)49 cited
- → Sidewall transfer process and selective gate sidewall spacer formation technology for sub-15nm finfet with elevated source/drain extension(2006)44 cited
- → Embedded Bulk FinFET SRAM Cell Technology with Planar FET Peripheral Circuit for hp32 nm Node and Beyond(2006)44 cited