M. M. Rozhavskaya
Ioffe Institute(RU)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, ZnO doping and properties, Semiconductor Quantum Structures and Devices, Metal and Thin Film Mechanics, Nanowire Synthesis and Applications
Most-Cited Works
- → Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice(2010)35 cited
- → High growth rate MOVPE of Al(Ga)N in planetary reactor(2011)21 cited
- → Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling(2015)20 cited
- → Fast AlGaN growth in a whole composition range in planetary reactor(2012)19 cited
- → Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN(2015)19 cited
- → Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide(2012)16 cited
- → Lattice dynamics of short‐period AlN/GaN superlattices: Theory and experiment(2013)12 cited
- → Gallium nitride nanowires and microwires with exceptional length grown by metal organic chemical vapor deposition via titanium film(2015)8 cited
- → Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer(2014)5 cited
- → Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region(2012)5 cited