Hong Zhou
Harbin University of Science and Technology(CN)Xidian University(CN)Shandong University(CN)State Grid Corporation of China (China)(CN)Jilin University(CN)Johannes Gutenberg University Mainz(DE)Shanghai University of Electric Power(CN)Chongqing Vocational and Technical University of Mechatronics(CN)Hunan Xiangdian Test Research Institute (China)(CN)Jilin Medical University(CN)China Huadian Corporation (China)(CN)China Southern Power Grid (China)(CN)Power Grid Corporation (India)(IN)
Publications by Year
Research Areas
Ga2O3 and related materials, ZnO doping and properties, GaN-based semiconductor devices and materials, Semiconductor materials and devices, Electronic and Structural Properties of Oxides
Most-Cited Works
- → Ultra-wide bandgap semiconductor Ga2O3 power diodes(2022)575 cited
- → Steep-slope hysteresis-free negative capacitance MoS2 transistors(2017)535 cited
- → Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications(2017)265 cited
- → 6 kV/3.4 mΩ·cm2 Vertical β-Ga2O3 Schottky Barrier Diode With BV2/Ron,sp Performance Exceeding 1-D Unipolar Limit of GaN and SiC(2022)171 cited
- → Field-Plated Lateral β-Ga2O3 Schottky Barrier Diode with High Reverse Blocking Voltage of More Than 3 kV and High DC Power Figure-of-Merit of 500 MW/cm2(2018)166 cited
- → Progress in state-of-the-art technologies of Ga 2 O 3 devices(2021)162 cited