Maria Ruzzarin
Fondazione Bruno Kessler(IT)
Publications by Year
Research Areas
GaN-based semiconductor devices and materials, Semiconductor materials and devices, Ga2O3 and related materials, Radiation Detection and Scintillator Technologies, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs(2016)122 cited
- → Reliability and failure analysis in power GaN-HEMTs: An overview(2017)107 cited
- → Degradation Mechanisms of GaN HEMTs With p-Type Gate Under Forward Gate Bias Overstress(2018)74 cited
- → NUV-HD SiPMs with metal-filled trenches(2023)47 cited
- → Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress(2016)44 cited
- → Positive and negative threshold voltage instabilities in GaN-based transistors(2017)41 cited
- → Gate Reliability of p-GaN Gate AlGaN/GaN High Electron Mobility Transistors(2019)34 cited
- → Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs(2020)27 cited
- → Instability of Dynamic- $R_{\text ON}$ and Threshold Voltage in GaN-on-GaN Vertical Field-Effect Transistors(2017)27 cited
- → Highly stable threshold voltage in GaN nanowire FETs: The advantages of p-GaN channel/Al2O3 gate insulator(2020)23 cited