Ming‐Jer Kao
National Chung Hsing University(TW)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, 3D IC and TSV technologies, Ferroelectric and Negative Capacitance Devices, Electronic Packaging and Soldering Technologies, Semiconductor materials and devices
Most-Cited Works
- → A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability(2011)247 cited
- → Redox Reaction Switching Mechanism in RRAM Device With $\hbox{Pt/CoSiO}_{X}\hbox{/}\hbox{TiN}$ Structure(2011)124 cited
- → A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes(2013)96 cited
- → Interfacial and annealing effects on magnetic properties of CoFeB thin films(2006)93 cited
- → Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface(2012)86 cited
- A 5ns fast write multi-level non-volatile 1 K bits RRAM memory with advance write scheme(2009)
- → Repeatable unipolar/bipolar resistive memory characteristics and switching mechanism using a Cu nanofilament in a GeOx film(2012)58 cited
- → How to select adhesive materials for temporary bonding and de-bonding of 200mm and 300mm thin-wafer handling for 3D IC integration?(2011)58 cited
- → Fast-Write Resistive RAM (RRAM) for Embedded Applications(2010)56 cited
- → Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots(2012)56 cited