Lurong Gan
Fudan University(CN)Shanghai Fudan Microelectronics (China)(CN)
Publications by Year
Research Areas
Advanced Memory and Neural Computing, Ferroelectric and Negative Capacitance Devices, Semiconductor materials and devices, Neuroscience and Neural Engineering, Perovskite Materials and Applications
Most-Cited Works
- → Two-dimensional ferroelectric channel transistors integrating ultra-fast memory and neural computing(2021)325 cited
- → ReS2 Charge Trapping Synaptic Device for Face Recognition Application(2020)13 cited
- → Simulations of VNW-FETs with Adjustable Spacer-Like Negative Capacitors Based on Experimental Data(2019)8 cited
- → A Floating Gate Memory with U-Shape Recessed Channel for Neuromorphic Computing and MCU Applications(2019)4 cited
- → An Enhanced Floating Gate Memory for the Online Training of Analog Neural Networks(2020)2 cited