Hyo Kyeom Kim
Seoul National University(KR)
Publications by Year
Research Areas
Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Advancements in Semiconductor Devices and Circuit Design, Semiconductor materials and interfaces, Electronic and Structural Properties of Oxides
Most-Cited Works
- → Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes(2013)179 cited
- → Stabilization of Tetragonal HfO2 under Low Active Oxygen Source Environment in Atomic Layer Deposition(2012)107 cited
- → Effects of O3 and H2O as oxygen sources on the atomic layer deposition of HfO2 gate dielectrics at different deposition temperatures(2014)50 cited
- → Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film(2014)41 cited
- → Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics(2011)40 cited
- → The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2Films on Ge Substrate(2012)35 cited
- → The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics(2011)30 cited
- → The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-$\hbox{In}_{2}\hbox{Ga}_{2}\hbox{ZnO}_{7}$(2013)27 cited
- → Scaling of equivalent oxide thickness of atomic layer deposited HfO2 film using RuO2 electrodes suppressing the dielectric dead-layer effect(2012)26 cited
- → Gate Engineering in TiN/La/TiN and TiLaN Metal Layers on Atomic-Layer-Deposited $\hbox{HfO}_{2}/\hbox{Si}$(2012)20 cited