Jun Tae Jang
Kookmin University(KR)
Publications by Year
Research Areas
Thin-Film Transistor Technologies, Advanced Memory and Neural Computing, ZnO doping and properties, CCD and CMOS Imaging Sensors, Semiconductor materials and devices
Most-Cited Works
- → Synaptic Plasticity Selectively Activated by Polarization-Dependent Energy-Efficient Ion Migration in an Ultrathin Ferroelectric Tunnel Junction(2017)107 cited
- → Study on the Photoresponse of Amorphous In–Ga–Zn–O and Zinc Oxynitride Semiconductor Devices by the Extraction of Sub-Gap-State Distribution and Device Simulation(2015)102 cited
- → Amorphous-InGaZnO4 Thin-Film Transistors with Damage-Free Back Channel Wet-Etch Process(2012)87 cited
- → Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4)(2018)56 cited
- → Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing(2019)44 cited
- → Artificial synaptic characteristics with strong analog memristive switching in a Pt/CeO2/Pt structure(2017)43 cited
- → Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System(2020)36 cited
- → Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT(2021)34 cited
- → Effect of oxygen content of the LaAlO 3 layer on the synaptic behavior of Pt/LaAlO 3 /Nb-doped SrTiO 3 memristors for neuromorphic applications(2017)29 cited
- → One Transistor–Two Memristor Based on Amorphous Indium–Gallium–Zinc-Oxide for Neuromorphic Synaptic Devices(2020)29 cited