T. S. Böscke
Publications by Year
Research Areas
Semiconductor materials and devices, Ferroelectric and Negative Capacitance Devices, Silicon and Solar Cell Technologies, Ferroelectric and Piezoelectric Materials, Advancements in Semiconductor Devices and Circuit Design
Most-Cited Works
- → Ferroelectricity in hafnium oxide thin films(2011)2,608 cited
- → Ferroelectricity in Simple Binary ZrO2 and HfO2(2012)1,684 cited
- → Ferroelectricity in yttrium-doped hafnium oxide(2011)678 cited
- → Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications(2011)570 cited
- → Ferroelectric hafnium oxide: A CMOS-compatible and highly scalable approach to future ferroelectric memories(2013)482 cited
- → Phase transitions in ferroelectric silicon doped hafnium oxide(2011)366 cited
- → Ferroelectricity in hafnium oxide: CMOS compatible ferroelectric field effect transistors(2011)342 cited
- → Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$(2012)181 cited
- → Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning(2008)178 cited
- → Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices(2007)124 cited