V. Ranki
Helsinki Institute of Physics(FI)
Publications by Year
Research Areas
Semiconductor materials and devices, Muon and positron interactions and applications, GaN-based semiconductor devices and materials, Silicon and Solar Cell Technologies, Semiconductor materials and interfaces
Most-Cited Works
- → Evidence of the Zn Vacancy Acting as the Dominant Acceptor inn-Type ZnO(2003)458 cited
- → Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy(2003)126 cited
- → Influence of dopants and substrate material on the formation of Ga vacancies in epitaxial GaN layers(2001)115 cited
- → Direct evidence of impurity decoration of Ga vacancies inGaNfrom positron annihilation spectroscopy(2006)104 cited
- → Introduction and recovery of Ga and N sublattice defects in electron-irradiated GaN(2007)86 cited
- → Formation of Vacancy-Impurity Complexes by Kinetic Processes in Highly As-Doped Si(2002)57 cited
- → Formation of Thermal Vacancies in Highly As and P Doped Si(2004)53 cited
- → Formation of vacancy-impurity complexes by annealing elementary vacancies introduced by electron irradiation of As-, P-, and Sb-doped Si(2004)43 cited
- → Electrical deactivation by vacancy-impurity complexes in highly As-doped Si(2003)37 cited
- → Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy(2005)37 cited